李成基, 李韫言. 电子扫描深能级瞬态谱(SDLTS)测量系统及其应用[J]. 分析测试技术与仪器, 1995, (2): 1-6.
引用本文: 李成基, 李韫言. 电子扫描深能级瞬态谱(SDLTS)测量系统及其应用[J]. 分析测试技术与仪器, 1995, (2): 1-6.
Li Chengji, Li Yunyan. Electron Scanning Deep-level Transient Spectroscope (SDLTS) System and Its Applications[J]. Analysis and Testing Technology and Instruments, 1995, (2): 1-6.
Citation: Li Chengji, Li Yunyan. Electron Scanning Deep-level Transient Spectroscope (SDLTS) System and Its Applications[J]. Analysis and Testing Technology and Instruments, 1995, (2): 1-6.

电子扫描深能级瞬态谱(SDLTS)测量系统及其应用

Electron Scanning Deep-level Transient Spectroscope (SDLTS) System and Its Applications

  • 摘要: 本文报导了在JXA-3A电子探针上,研制了电子束感生电流装置、电子束消隐装置、可微动低温样品台以及超慢速电子来扫描装置,配置Boxcar平均器.成功地开发了电子束扫描深能级瞬态谱测量系统,它的温度范围为80-450K,空间分辨率约10μm,测量稳定度为1.5%.对GaAs和Si中的深能级及其空间分布进行了测量,并与其结构缺陷进行了对比研究.

     

    Abstract: An electron scanning deep-level transient specstrope (SDLTS) measurement system based on a JXA-3A electron microprobe has been developed. The system consists of an electron beam induced unit, an electron beam blanking unit, a micro-movable low-temperature sample holder, a super-slow electron unit,a Boxcar averager.The system can be operated at a temperature ranging beween 80 and 450K, has resolution of about 10μp and repeatability of about 1.5%. The deep-levels and their spatial distributions of both semi-insulating ha and high resistance silicon detectors have been measured using the system and studied by comparing with the material structure defects.

     

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