利用高分辨X射线衍射仪表征GaN薄膜的结构特性

Characterization of Structure of GaN Films by High Resolution X-ray Diffraction Analysis

摘要: 使用高分辨X射线衍射法(HRXRD)对金属有机物化学气相沉积(MOCVD)外延生长GaN薄膜进行微结构表征.首先采用绝对测量法精确测试了GaN薄膜的晶格常数,由此获得该GaN薄膜的应变与弛豫的信息.采用面内掠入射(IP-GID)法测定了GaN薄膜的位错密度以及位错扭转角.

Abstract: High-resolution X-ray diffractometry was used to analyze GaN layers grown on sapphire using a metal-organic chemical vapor deposition(MOCVD) method.The crystal structures were determined by the absolute measurement,and the dislocation densities and dislocation torsion angle were determined by the in-plane grazing incidence.