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徐建成, 刘澎, 陈定钦. 平面型Gunn器件低温SiO2和PSG的淀积[J]. 分析测试技术与仪器, 1996, (1): 57-60.
引用本文: 徐建成, 刘澎, 陈定钦. 平面型Gunn器件低温SiO2和PSG的淀积[J]. 分析测试技术与仪器, 1996, (1): 57-60.
shu
Xu Jiancheng, Liu Peng, Chen Dingqin. Deposition of Silicon Dioxide at Low Temperature in Plane Type Gunn Domain Avalanche Device[J]. Analysis and Testing Technology and Instruments, 1996, (1): 57-60.
Citation: Xu Jiancheng, Liu Peng, Chen Dingqin. Deposition of Silicon Dioxide at Low Temperature in Plane Type Gunn Domain Avalanche Device[J]. Analysis and Testing Technology and Instruments, 1996, (1): 57-60.
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平面型Gunn器件低温SiO2和PSG的淀积

Deposition of Silicon Dioxide at Low Temperature in Plane Type Gunn Domain Avalanche Device

    摘要
  • 摘要: 采用“夹层结构”的方法制作平面型Gunn畴雪崩器件的n型GaAs外延材料,以及低温(420℃～450℃)淀积SiO2的原理、工艺条件和可控硅电路。

     

    Abstract: This paper describes the principle of silicon dioxide deposition at low premature(420℃-450℃)on n-type GaAs epituial material in a plane type Gunn domain avalanche device. The sandwich structure of silicon dioxide as Well as deposition technology are given.We have also shown the circuit diagram of controllable silicon and some relaied important results.

     

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