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张泽兰, 曾立波, 齐芸馨. 半绝缘砷化镓单晶中AB微缺陷的定量测量方法[J]. 分析测试技术与仪器, 1999, (1): 45-47.
引用本文: 张泽兰, 曾立波, 齐芸馨. 半绝缘砷化镓单晶中AB微缺陷的定量测量方法[J]. 分析测试技术与仪器, 1999, (1): 45-47.
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ZHANG Zelan, ZENG Libo, QI Yunxin. A Quantitative Method of AB Microscopic Defects in Semi-insulating GaAs Single Crystals[J]. Analysis and Testing Technology and Instruments, 1999, (1): 45-47.
Citation: ZHANG Zelan, ZENG Libo, QI Yunxin. A Quantitative Method of AB Microscopic Defects in Semi-insulating GaAs Single Crystals[J]. Analysis and Testing Technology and Instruments, 1999, (1): 45-47.
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半绝缘砷化镓单晶中AB微缺陷的定量测量方法

A Quantitative Method of AB Microscopic Defects in Semi-insulating GaAs Single Crystals

    摘要
  • 摘要: 报道了非掺杂半绝缘砷化镓单晶中AB微缺陷显微特征的研究结果,提出了一种自动定量测量微缺陷的方法,并在WD-5图象处理分析系统中实现了该算法。

     

    Abstract: The microscopic characteristics of AB microdefects in LEC undoped semi-insulating GaAs single crystals have been studied. A new method for auto mesurement of microdefects is proposed and realized by WD-5 image processing and analysis system.

     

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