Abstract: In order to fabricate high level AlGaN thin films with high Al component,the common method is to fabricate a buffer plane(GaN,AlN or superlattice with both of them) between the sapphire matrix and epitaxial thin film which can improve the properties of AlGaN.Different buffer planes and structure have different effects on properties of AlGaN epitaxial thin films.Two AlGaN thin films with two different growing structure were characterized by TAXRD.The rocking curve scan,reciprocal space mapping and SEM image ...