Determination of High Concentration Si in Ni-Cu Alloy by ICP-AES

A method for the determination of Si in Ni-Cu alloys by ICP-AES is introduced. A systemetic study on the dissolution of the sample, the apparatus parameters has been carried out, and the optimized conditions were obtained. The analytical line used was Si 251.611 nm, and internal standard element line Y 371.029 nm. The sample dissolve in nitric acid plus hydrchloric acid, hydrogen fluoride was added to and that control the temperature.The results were consistent with those of the chemical method(Gravimetric). The recovery of the sample was 99% to 102% and the RSD was 0.77%.